Chemical vapor deposition of Ru and its application in (Ba,Sr)TiO3 capacitors for future dynamic random access memories

被引：62

作者：

Aoyama, T ^{[1
]}

Kiyotoshi, M ^{[1
]}

Yamazaki, S ^{[1
]}

Eguchi, K ^{[1
]}

机构：

[1] Toshiba Corp, Microelect Engn Lab, ULSI Proc Engn Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

Ru; CVD; electrode; (Ba; Sr)TiO3; capacitor; Ru(C5H5)(2); O-2; step coverage;

D O I：

10.1143/JJAP.38.2194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ru films were fabricated by chemical vapor deposition using Ru(C5H5)(2) and O-2. The deposition of Rn film was controlled by the surface reaction kinetics as the rate limiting step with activation energy of 2.48 eV below 250 degrees C and by the mass transport process above 250 degrees C. Ru films had a polycrystalline structure and showed low resistivity of about 12 mu Omega cm. Ru films deposited at 230 degrees C showed excellent step coverage. We applied Ru films prepared by chemical vapor deposition to the bottom electrode of a Ba0.25Sr0.75TiO3 capacitor and obtained good electrical characteristics.

引用

页码：2194 / 2199

页数：6

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