Optical phonons in ZnxCd1-xSe thin films

被引：17

作者：

AvendanoLopez, J ^{[1
]}

CastilloAlvarado, FL ^{[1
]}

EscamillaEsquivel, A ^{[1
]}

ContrerasPuente, G ^{[1
]}

OrtizLopez, J ^{[1
]}

ZelayaAngel, O ^{[1
]}

机构：

[1] IPN,CINVESTAV,DEPT FIS,MEXICO CITY 07000,DF,MEXICO

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 01期

关键词：

semiconductors; thin films; phonons;

D O I：

10.1016/0038-1098(96)00356-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A calculation is presented on the evolution of longitudinal and transverse optical phonons as a function of the concentration parameter x in the system Zn, Cd1-xSe. The calculation is based in an isodisplacement model of the atoms which include interactions to first and second neighbors. The model is fitted to Raman measurements carried out on thin-film samples grown by Close Spaced Vapor Transport (CSVT). Comparison to the experimental data allows to conclude that the x-dependence of these optical modes corresponds to an intermediate-mode behavior. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：33 / 36

页数：4

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