First-principles calculations of gap bowing in InxGa1-xN and InxAl1-xN alloys:: Relation to structural and thermodynamic properties -: art. no. 075213

被引:162
作者
Ferhat, M [1 ]
Bechstedt, F
机构
[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
[2] Univ Sci & Technol Oran, Dept Phys, Oran, Algeria
关键词
D O I
10.1103/PhysRevB.65.075213
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principles pseudopotential plane-wave calculations are used to investigate the electronic, structural, and thermodynamic properties of cubic nitride alloys InxGa1-xN and InxAl1-xN. The alloys are described within a cluster-expansion method considering configurations in large 64-atom supercells. We find a strong composition-dependent gap bowing for both InGaN and InAlN alloys. The strongest contribution to the gap bowing is due to a structural effect, i.e., the composition-induced disorder in the bond lengths. Charge transfer is found to be important only for InAlN alloys. A small deviation from Vegard's law is found for the lattice parameter variation in InGaN and InAlN alloys, The calculated first- and second-nearest-neighbor distances in InxGa1-xN alloys are in good agreement with the experimental data. The investigation of the thermodynamic stability of InGaN and InAlN alloys shows a significant tendency for spinodal decomposition.
引用
收藏
页码:1 / 7
页数:7
相关论文
共 45 条
  • [1] Resonant hole localization and anomalous optical bowing in InGaN alloys
    Bellaiche, L
    Mattila, T
    Wang, LW
    Wei, SH
    Zunger, A
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (13) : 1842 - 1844
  • [2] ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS
    BERNARD, JE
    ZUNGER, A
    [J]. PHYSICAL REVIEW B, 1987, 36 (06) : 3199 - 3228
  • [3] Optical properties of cubic GaN and (In, Ga)N
    Brandt, O
    Mullhauser, JR
    Yang, B
    Yang, H
    Ploog, KH
    [J]. PHYSICA E, 1998, 2 (1-4): : 532 - 538
  • [4] DENSITY-FUNCTIONAL THEORY APPLIED TO PHASE-TRANSFORMATIONS IN TRANSITION-METAL ALLOYS
    CONNOLLY, JWD
    WILLIAMS, AR
    [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5169 - 5172
  • [5] Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO
  • [6] 2-O
  • [7] Phase separation in InGaN grown by metalorganic chemical vapor deposition
    El-Masry, NA
    Piner, EL
    Liu, SX
    Bedair, SM
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (01) : 40 - 42
  • [8] Refractive index and gap energy of cubic InxGa1-xN
    Goldhahn, R
    Scheiner, J
    Shokhovets, S
    Frey, T
    Köhler, U
    As, DJ
    Lischka, K
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (03) : 291 - 293
  • [9] INHOMOGENEOUS ELECTRON-GAS
    RAJAGOPAL, AK
    CALLAWAY, J
    [J]. PHYSICAL REVIEW B, 1973, 7 (05) : 1912 - 1919
  • [10] EXAFS studies of group III nitrides
    Jeffs, NJ
    Blant, AV
    Cheng, TS
    Foxon, CT
    Bailey, C
    Harrison, PG
    Mosselmans, JFW
    Dent, AJ
    [J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 519 - 524