New technological development for far infrared bolometer arrays

被引：20

作者：

Agnese, P ^{[1
]}

Buzzi, C ^{[1
]}

Rey, P ^{[1
]}

Rodriguez, L ^{[1
]}

Tissot, JL ^{[1
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXV | 1999年 / 3698卷

关键词：

bolometer; far infrared; submillimeter; detector; IRFPA;

D O I：

10.1117/12.354530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CEA.S/DAPNIA/DSM and LETI/CEA.G are developing since 1996 a new technology for the realization of far infrared bolometer arrays sensitive in submillimeter wavelength range. The operating temperature is 0.3 Kelvin. Microtechnologies on silicon and flip-chip techniques are used for the detector fabrication and CMOS technology is used for the multiplexer and the readout integrated circuit. We present the concept that we have defined for the focal plane architecture and the readout principle design for 16 x 16 or 32 x 32 array. The first experimental results obtained on optical, electrical and thermal parameters are presented.

引用

页码：284 / 290

页数：7

共 7 条

[1] BUZZI C, 1997, P 7 INT WORKSH LOW T
[2] KANTZ RL, 1978, J APPL PHYS, V49, P308
[3] FIRST - FAR-INFRARED AND SUBMILLIMETER SPACE TELESCOPE, A MAJOR SCIENTIFIC PROJECT OF THE EUROPEAN-SPACE-AGENCY
LAMARRE, JM
[J]. OPTICAL ENGINEERING, 1994, 33 (03) : 785 - 790
[4] MARTIGNAC J, 1998, THESIS CNAM PARIS
[5] SAVRY O, 1998, THESIS J FOURIER U G
[6] Collective flip-chip technology for HgCdTe IRFPA
Tissot, JL
Marion, F
[J]. DETECTORS, FOCAL PLANE ARRAYS, AND APPLICATIONS, 1996, 2894 : 115 - 122
[7] WINNEWISSER G, 1984, ESA SP, V1070, P104

← 1 →