Strong pinning linear defects formed at the coherent growth transition of pulsed-laser-deposited YBa2Cu3O7-δ films -: art. no. 064528

被引:43
作者
Dam, B [1 ]
Huijbregtse, JM [1 ]
Rector, JH [1 ]
机构
[1] Fac Sci, Div Phys & Astron, NL-1081 HV Amsterdam, Netherlands
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 06期
关键词
D O I
10.1103/PhysRevB.65.064528
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Linear defects are important pinning sites for vortices in high-temperature superconductors. In YBa2Cu3O7-delta thin films, the linear defects responsible for high critical currents are threading dislocations formed near the substrate interface. Investigating the first stages of growth of pulsed-lased-deposited YBa2Cu3O7-delta on single terminated (100) SrTiO3 substrates, we study the genesis of these dislocations. We find that the formation of linear defects occurs above a certain critical layer thickness at which a coherent growth transition takes place. Coherent islands are formed, surrounded by highly strained trenches. These trenches facilitate the formation of dislocation half-loops. Such half-loops relieve the misfit strain and form misfit and threading dislocations. The number of threading dislocations thus depends on the island density. This model explains both the short-range lateral order of the threading dislocations and their decreasing density at elevated substrate temperatures.
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页码:1 / 8
页数:8
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