Solution of a new molecular structure {[SnClGe(SiC3H9)(3)](4)} by simulated annealing

被引：6

作者：

Chen, YS

Su, WP

Mallela, SP

Geanangel, RA

机构：

[1] UNIV HOUSTON,TEXAS CTR SUPERCONDUCT,HOUSTON,TX 77204

[2] UNIV HOUSTON,DEPT CHEM,HOUSTON,TX 77204

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1997年 / 53卷

关键词：

D O I：

10.1107/S0108767397002766

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A crystal is known to possibly contain Sn, Ge, Si, C, Cl and H but the precise stoichiometry is unknown. In addition, the crystal seems to be highly disordered. The X-ray data did not yield to conventional direct methods. The structure has been solved by employing simulated annealing. The methodology involved is presented.

引用

页码：396 / 399

页数：4

共 5 条

[1] DIRECT CALCULATION OF ATOMIC COORDINATES FROM DIFFRACTION INTENSITIES - SPACE GROUP P1 [J].