Gas sensitivity of reactively sputtered SnO2 films

被引：3

作者：

Chen, JS ^{[1
]}

Lo, WT ^{[1
]}

Huang, JL ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2002年 / 110卷 / 01期

关键词：

tin oxide; gas sensor; thin film; sensitivity; platinum; reactive sputtering;

D O I：

10.2109/jcersj.110.18

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tin oxide (SnO2) films were deposited by r.f. (Radio Frequency) magnetron reactive sputtering and subsequently annealed at 900degreesC. The effect of deposition parameters and Pt catalyst content on phases and gas sensitivity of the SnO2 films were investigated. It was shown that the amorphous phase disappeared, polycrystalline SnO2 formed after heat treatment, and the crystallinity of SnO2 reduced with decreasing oxygen flow rate. The gas sensitivity of tin oxide films deposited at 50 seem was consistently higher than that of 25 seem and invariably increased with the CO concentration. The sensitivity of Pt doped SnO2 films was, however, much superior to that of undoped samples. In addition, the sensitivity consistently decreased with the amount of Pt.

引用

页码：18 / 21

页数：4

共 12 条

[1] TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].