Thickness determination of SrZrO3 thin films using both X-ray reflectometry and SIMS techniques

被引：11

作者：

Galicka-Fau, K. ^{[1
]}

Legros, C. ^{[1
]}

Andrieux, M. ^{[1
]}

Herbst-Ghysel, M. ^{[1
]}

Gallet, I. ^{[1
]}

Condat, M. ^{[1
]}

Durand, O. ^{[2
]}

Servet, B. ^{[2
]}

机构：

[1] Univ Paris 11, LEMHE ICMMO, CNRS, UMR 8182, F-91405 Orsay, France

[2] THALES Res & Technol France, RD 128, F-91767 Palaiseau, France

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 22期

关键词：

Thin films; SrZrO3; Perovskite; XRR; SIMS; FTIR;

D O I：

10.1016/j.tsf.2008.04.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-k SrZrO3 perovskite thin films, suitable for microelectronics applications were deposited under various conditions on plane Si (100) substrates by direct liquid injection metal-organic chemical vapor deposition (MOCVD) method. Depending on the deposition temperature, films were mono- or multi-layered and either crystallized either amorphous. Amorphous films were annealed in order to obtain the expected orthorhombic perovskite structure. The thicknesses of individual layer as well as multi-layers of the stacks were determined with reflectometry measurements. SIMS measurements were also conducted on the thin films to estimate the order of the multi-layers. Thicknesses were successfully confirmed by this destructive method and chemical environment of the films was determined as well as the composition of the layers. Compared with infrared transmission measurements on as-deposited and post-annealed films, it gives clues on desorption of volatile species. Thus, crystallographic and chemical structures were precise on studied samples. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：7967 / 7973

页数：7

共 15 条

[1] Perovskite thin films grown by direct liquid injection MOCVD [J].

Andrieux, M. ;

Gasqueres, C. ;

Legros, C. ;

Gallet, I. ;

Herbst-Ghysel, M. ;

Condat, M. ;

Kessler, V. G. ;

Seisenbaeva, G. A. ;

Heintz, O. ;

Poissonnet, S. .

APPLIED SURFACE SCIENCE, 2007, 253 (23) :9091-9098

[2]

Bridou F, 1994, J Xray Sci Technol, V4, P200, DOI 10.3233/XST-1993-4304

[3] FT-IR, structure and dielectric. property investigation of strontium zirconate thin films prepared by MOD technique [J].

Chen, CH ;

Zhu, WG ;

Yu, T ;

Chen, XF ;

Yao, X ;

Krishnan, RG .

SURFACE & COATINGS TECHNOLOGY, 2003, 167 (2-3) :245-248

[4] Preparation of metal-organic decomposition-derived strontium zirconate dielectric thin films [J].

Chen, CH ;

Zhu, WG ;

Yu, T ;

Chen, XF ;

Yao, X .

APPLIED SURFACE SCIENCE, 2003, 211 (1-4) :244-249

[5] Metallo-organic decomposition derived (Ca, Sr)ZrO3 dielectric thin films on Pt coated Si substrate [J].

Chen, Changhong ;

Huang, Dexiu ;

Zhu, Weiguang ;

Yao, Xi .

APPLIED SURFACE SCIENCE, 2006, 252 (20) :7585-7589

[6] Reaction-diffusion in high-k dielectrics on Si [J].

de Almeida, RMC ;

Baumvol, IJR .

SURFACE SCIENCE REPORTS, 2003, 49 (1-3) :1-114

[7] Studies of oxide-based thin-layered hetero structures by X-ray scattering methods [J].

Durand, O. ;

Rogers, D. ;

Teherani, F. Hosseini ;

Andrieux, M. ;

Modreanu, M. .

THIN SOLID FILMS, 2007, 515 (16) :6360-6367

[8] Characterization of multilayered materials for optoelectronic components by high-resolution X-ray diffractometry and reflectometry: contribution of numerical treatments [J].

Durand, O .

THIN SOLID FILMS, 2004, 450 (01) :51-59

[9] Fabrication and characterization of SrZrO3 thin films prepared by sol-gel [J].

Ling, HQ ;

Li, AD ;

Wu, D ;

Tang, YF ;

Liu, ZG ;

Ming, NB .

MATERIALS CHEMISTRY AND PHYSICS, 2002, 75 (1-3) :170-173

[10] Dielectric properties of SrZrO3 thin films prepared by pulsed laser deposition [J].

Lu, XB ;

Shi, GH ;

Webb, JF ;

Liu, ZG .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 77 (3-4) :481-484

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