Investigations of the incorporation of B, P and N into CVD-diamond films by secondary ion mass spectrometry

B-, P- and N-doped polycrystalline diamond films have been produced using the hot-filament CVD method by the addition of triethylborane, phosphine and molecular nitrogen. The doping level - not aimed at semiconducting applications but to investigate the influence of the addition on diamond crystal growth and the formation of new phases containing the doping elements - was investigated by depth-profiling secondary-ion mass spectrometry (SIMS). The dopant concentrations, which seemed tp be linearly related to the dopant gas concentrations, were quantified using ion-implantation standards and compared to nuclear reaction analysis (NRA) results. In the investigated doping region, boron (0.4-2.8 at.%) is enriched during the deposition by a factor of six to nine, phosphorus (10-600 ppma) (ppm atomic) shows a doping efficiency below one, and nitrogen is incorporated below about 100 ppma.