Cathodoluminescence microscopy of doped GaSb crystals

被引：14

作者：

Mendez, B ^{[1
]}

Piqueras, J ^{[1
]}

Dutta, PS ^{[1
]}

Dieguez, E ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT,E-28049 MADRID,SPAIN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 42卷 / 1-3期

关键词：

cathodoluminescence; diffusion time; tellurium;

D O I：

10.1016/S0921-5107(96)01680-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and doped (chromium) material. CL investigations have revealed a non uniform distribution of native defects in GaSb wafers. Post growth annealing in vacuum, gallium or antimony atmospheres causes an increase in homogeneity in CL images. Te diffusion and Cr doping provides new information about defects in GaSb. CL images and CL spectra recorded in these samples support that the type of defects formed is a function of diffusion time and impurity concentration.

引用

页码：38 / 42

页数：5

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