Asymmetric spin gap opening of graphene on cubic boron nitride (111) substrate

被引：23

作者：

Lu, Y. H. ^{[1
]}

He, P. M. ^{[1
]}

Feng, Y. P. ^{[2
]}

机构：

[1] Zhejiang Univ, Dept Phys, Hangzhou 310003, Zhejiang, Peoples R China

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 33期

关键词：

D O I：

10.1021/jp802525v

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene grown on cubic BN (111) is studied using the first-principles method based on density functional theory. Results of our calculations reveal that spin polarized surface states break the equivalence of the A and B sublattices and lead to spin polarized graphene bands with finite energy gaps. As a result, spin polarized carriers can be generated by shifting the Fermi-level inside the band gap of minority (majority) spin but inside the conduction (valence) band of majority (minority) spin. The spin state of the injected electrons can be manipulated by an external electric field alone.

引用

页码：12683 / 12686

页数：4

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