The role of structural properties and defects for the performance of Cu-chalcopyrite-based thin-film solar cells

被引：32

作者：

Schock, HW ^{[1
]}

Rau, U ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

multinary compound semiconductors; photovoltaics; defect formation; Cu(In; GA)Se-2; bulk and surface defects;

D O I：

10.1016/S0921-4526(01)00863-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polycrystalline thin-films of the multinary chalcopyrite semiconductor Cu(In,Ga)Se-2. are very well suited for highly efficient thin film solar cells. The material exhibits an astonishingly broad range of compositions in which good electronic properties are maintained, This article analyses some important aspects of the defect physics and defect chemistry of this semiconductor and compares recent models for the surface of polycrystalline Cu(In,Ga) Se-2 and their consequences for the formation of the ZnO/CdS/Cu(In,Ga) Se-2 heterojunction. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1081 / 1085

页数：5

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