Reflection of a Gaussian beam from a saturable absorber

被引:21
作者
Petrov, DV [1 ]
Gomes, ASL [1 ]
deAraujo, CB [1 ]
机构
[1] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA
关键词
D O I
10.1016/0030-4018(95)00593-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The modification of a Gaussian beam profile caused by the electronic contribution to the surface nonlinear absorption of a semiconductor doped glass was measured. The reflection Z-scan and transmission Z-scan techniques used allow to observe differences between the bulk and the surface nonlinear properties.
引用
收藏
页码:637 / 641
页数:5
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