Semimagnetic II-VI heterostructures for resonant tunneling

被引：5

作者：

Keim, M ^{[1
]}

Lunz, U ^{[1
]}

Hu, CY ^{[1
]}

Zehnder, U ^{[1
]}

Ossau, W ^{[1
]}

Waag, A ^{[1
]}

Landwehr, G ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

resonant tunneling; beryllium-chalcogenides; MBE; semimagnetism;

D O I：

10.1016/S0022-0248(98)01436-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on resonant tunneling in MBE-grown semimagnetic (Zn, Mn)Se/BeTe double-barrier structures. Manganese has been incorporated in the quantum-well region at a concentration of up to 15%. The structures have been investigated using current-voltage measurements at low temperatures with an applied magnetic field up to 7 T. In an external magnetic field, no indication of a giant Zeeman splitting of the subbands in the semimagnetic quantum well could be detected, which is very surprising. Photoluminescence spectra as a function of applied voltage show a variety of different features, including type II electron-hole recombination from the conduction band of the emitter or the quantum well to the valence band of the BeTe barriers, which is a special feature of the BeTe-ZnSe system used here. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：711 / 714

页数：4

共 3 条

[1]

Keim M, 1998, J CRYST GROWTH, V184, P806

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