Emanation thermal analysis of SiC based materials

被引：6

作者：

Balek, V ^{[1
]}

Zelenák, V

Mitsuhashi, T

Bakardjieva, S

Subrt, J

Haneda, H

机构：

[1] Nucl Res Inst, CZ-25068 Rez, Czech Republic

[2] NIMS, Tsukuba, Ibaraki 3050044, Japan

[3] Acad Sci Czech Republ, Inst Inorgan Chem, CZ-25068 Rez, Czech Republic

来源：

JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY | 2002年 / 67卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

emanation thermal analysis; SEM; SiC nanocomposites;

D O I：

10.1023/A:1013733813269

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Results of emanation thermal analysis (ETA) characterizing microstructure changes of SiC based materials during heat treatment in argon are demonstrated. This method made it possible to reveal fine changes of the texture of SiC nano-sized powders, SiC micro-sized powders and SiC whiskers under in situ conditions of the heating. ETA curves can serve as 'fingerprints' of the respective samples.

引用

页码：83 / 89

页数：7

共 10 条

[1]

Balek V, 1996, AM CERAM SOC BULL, V75, P73

[2] CHARACTERIZATION OF HIGH-TECHNOLOGY MATERIALS BY EMANATION THERMAL-ANALYSIS [J].