Front and rear silicon-nitride-passivated multicrystalline silicon solar cells with an efficiency of 18.1%

被引：12

作者：

Mittelstädt, L

Dauwe, S

Metz, A

Hezel, R

Hässler, C

机构：

[1] Inst Solarenergieforsch Hameln Emmerthal ISFH, D-31860 Emmerthal, Germany

[2] Bayer AG, Cent Res Dept, D-47829 Krefeld, Germany

来源：

PROGRESS IN PHOTOVOLTAICS | 2002年 / 10卷 / 01期

关键词：

Crystalline materials - Low temperature effects - Passivation - Photolithography - Plasma enhanced chemical vapor deposition - Silicon nitride;

D O I：

10.1002/pip.423

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A solar cell process designed to utilise low-temperature plasma-enhanced chemical vapour deposited (PECVD) silicon nitride (SiNx) films as front and rear surface passivation was applied to fabricate multicrystalline silicon (me-Si) solar cells. Despite the simple photolithography-free processing sequence, an independently confirmed efficiency of 18.1% (cell area 2 x 2 cm(2)) was achieved. This excellent efficiency can be predominantly attributed to the superior quality of the rear surface passivation scheme consisting of an SiNx film in combination with a local aluminium back-surface field (LBSF). Thus, it is demonstrated that low-temperature PECVD SiNx films are well suited to achieve excellent rear surface passivation on mc-Si. Copyright (C) 2002 John Wiley Sons, Ltd.

引用

页码：35 / 39

页数：5

共 10 条

[1]

DAUWE S, PROGR PHOTOVOLTAICS

[2]

HUBNER A, 1997, P 14 EUR PHOT SOL EN, P92

[3]

KERR MJ, 2000, P 16 EUR PHOT SPEC C, P1177

[4] Record low surface recombination velocities on 1 Omega cm p-silicon using remote plasma silicon nitride passivation [J].

Lauinger, T ;

Schmidt, J ;

Aberle, AG ;

Hezel, R .

APPLIED PHYSICS LETTERS, 1996, 68 (09) :1232-1234

[5] High-quality passivated rear contact structure for silicon solar cells based on simple mechanical abrasion [J].

Metz, A ;

Hezel, R .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :172-175

[6] Record efficiencies above 21% for MIS-contacted diffused junction silicon solar cells [J].

Metz, A ;

Hezel, R .

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, :283-286

[7]

Nagel H., 1997, P 14 EUR PHOT SOL EN, P762

[8]

ROHATGI A, 1996, P 25 IEEE PHOT SPEC, P741

[9]

STOCKS M, 1997, P 14 EUR PHOT SOL EN, P766

[10] A 19.8% efficient honeycomb multicrystalline silicon solar cell with improved light trapping [J].

Zhao, JH ;

Wang, AH ;

Campbell, P ;

Green, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (10) :1978-1983

← 1 →