Space-charge-limited currents in materials with Gaussian energy distributions of localized states

被引:53
作者
Arkhipov, VI [1 ]
Heremans, P [1 ]
Emelianova, EV [1 ]
Adriaenssens, GJ [1 ]
机构
[1] Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Heverlee, Belgium
关键词
D O I
10.1063/1.1424046
中图分类号
O59 [应用物理学];
学科分类号
摘要
A model is formulated describing trap-controlled space-charge-limited currents (SCLCs) in an organic material with a Gaussian density-of-states (DOS) distribution. It is shown that SCLC is not always controlled by carrier release from localized states around the Fermi level and, therefore, a Gaussian DOS can serve as either shallow or deep distribution of localized states depending upon the carrier and/or current density. (C) 2001 American Institute of Physics.
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页码:4154 / 4156
页数:3
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