PIN silicon diodes as EXAFS signal detectors

被引：9

作者：

Dalba, G ^{[1
]}

Fornasini, P ^{[1
]}

Soldo, Y ^{[1
]}

Rocca, F ^{[1
]}

机构：

[1] CNR,CTR FIS STATI AGGREGATI,CEFSA,I-38050 POVO,TRENTO,ITALY

来源：

JOURNAL OF SYNCHROTRON RADIATION | 1996年 / 3卷

关键词：

EXAFS detectors; PIN silicon diodes; X-ray absorption spectroscopy;

D O I：

10.1107/S0909049596006073

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The properties of PIN silicon diodes as X-ray detectors for EXAFS measurements with synchrotron radiation have been investigated. Electronic stability, linearity and noise current have been analyzed. The effects of diffraction peaks resulting from the crystalline nature of the diodes have been minimized by mounting the diodes on a simple device that continuously changes its orientation by a few degrees with respect to the X-ray beam. An accurate comparison between EXAFS signals monitored by ionization chambers and PIN photodiodes is presented. II is shown that good-quality EXAFS measurements with PIN photodiodes are possible if diffraction effects are eliminated.

引用

页码：213 / 219

页数：7

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