Characterization of zirconium silicate gate dielectrics deposited on si(100) using Zr(NEt2)4 and Si(OnBu)4

被引：29

作者：

Kim, J ^{[1
]}

Yong, KJ ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Div Elect & Comp Engn, Pohang 790784, Kyungbuk, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 05期

关键词：

D O I：

10.1149/1.1676114

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Zirconium silicate [(ZrO2)(X)(SiO2)(1-X)] films were deposited by using a combination of precursors: tetrakis(diethylamido)zirconium [Zr(NEt2)(4)] and tetra-n-butyl orthosilicate [Si(O"Bu)(4)]. An atomically flat interface of silicate/silicon was observed with no interfacial silicon oxide layers and impurity concentrations were less than 0.1 atom % (below detection limits). Zirconium silicate films with similar to20% ZrO2 were amorphous up to 800degreesC and, above 900degreesC, phase separation of the films occurred into crystal ZrO2 and amorphous phases. Dielectric constant (k) of the Zr-silicate films was about 7.3. Hysteresis in capacitance-voltage (C-V) measurements was less than 0.02 V. The leakage current density was 1.63x10(-4) A/cm(2) at a bias of 1.0 V. (C) 2004 The Electrochemical Society.

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页码：F35 / F37

页数：3

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