Electric conductivity of the zero-gap semiconducting state in α-(BEDT-TTF)2I3 salt

被引：40

作者：

Katayama, S ^{[1
]}

Kobayashi, A ^{[1
]}

Suzumura, Y ^{[1
]}

机构：

[1] Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2006年 / 75卷 / 02期

关键词：

organic conductor; electric conductivity; zero-gap semiconductor; Dirac cone; multi band; uniaxial pressure; alpha-(BEDT-TTF)(2)I-3;

D O I：

10.1143/JPSJ.75.023708

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electric conductivity that reveals the zero-gap semiconducting (ZGS) state has been investigated as a function of temperature T and lifetime T in order to understand the ZGS state in a quarter-filled ce(BEDT-TTF)(2)I-3 salt with four sites in the unit cell. By treating tau as a parameter and employing the one-loop approximation, it is found that the conductivity is proportional to T and tau for k(B)T >> h/tau and is independent of T and tau for kBT << h/tau. Further, the conductivity, which is independent of T in the ZGS state, is examined for the impurity scattering in terms of the Born approximation.

引用

页数：4

共 18 条

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