Thermoelectric properties of ZrNiSn-based half-Heusler compounds by solid state reaction method

被引：38

作者：

Shen, Q ^{[1
]}

Zhang, LM

Chen, LD

Goto, T

Hirai, T

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 98077, Japan

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 24期

关键词：

D O I：

10.1023/A:1017928800031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZrNiSn-based half-Heusler compounds were fabricated by the method of solid state reaction. In a Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 compound, a thermal conductivity as low as 4.5 W/m-K was measured at room temperature. Although the Seebeck coefficient decreased, it was only by a small amount. The ZT value reached a maximum value of 0.7 at about 800 K for the Hf0.5Zr0.5Ni0.8Pd0.2- Sn0.99Sb0.01 sample.

引用

页码：2197 / 2199

页数：3

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