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Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
被引：63
作者：
Ahlgren, DC
Gilbert, M
Greenberg, D
Jeng, SJ
Malinowski, J
NguyenNgoc, D
Schonenberg, K
Stein, K
Groves, R
Walter, K
Hueckel, G
Colavito, D
Freeman, G
Sunderland, D
Harame, DL
Meyerson, B
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.554115
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
Early production results are reviewed for IBM's integrated SiGe HBT Technology. With a sample size of over 200 wafers, statistical contol of key HBT parameters (F-T, F-max, R(bb), R(bi), beta) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirements for the high performance wireless communications marketplace.
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页码：859 / 862
页数：4
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