Steady state optical gain in small semiconductor quantum dots

被引:10
作者
Andrews, JT [1 ]
Sen, P
机构
[1] Ctr Adv Technol, Biomed Applicat Sect, Indore 452013, India
[2] Shri GS Inst Technol & Sci, Dept Appl Phys, Indore 452003, Madhya Pradesh, India
关键词
D O I
10.1063/1.1435839
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical gain phenomena in a single semiconductor quantum dot as well as in an inhomogeneous distribution of quantum dots have been studied. The analytical results obtained using the density matrix technique and numerical analysis for CdS quantum dots show an enhancement of gain in the presence of biexcitons. The numerical results show larger gain in bigger quantum dots. A redshift of gain maxima occurs when the distribution width is large. The realization of high gain quantum dot lasers and photodetectors appears to be a distinct possibility. (C) 2002 American Institute of Physics.
引用
收藏
页码:2827 / 2832
页数:6
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