Toward Nanowire Electronics

被引：281

作者：

Appenzeller, Joerg ^{[1
]}

Knoch, Joachim ^{[2
]}

Bjoerk, Mikael I. ^{[2
]}

Riel, Heike ^{[2
]}

Schmid, Heinz ^{[2
]}

Riess, Walter ^{[2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 11期

关键词：

Impact ionization; MOSFET; nanowire FET; nanowire growth; Schottky-barrier; steep slope transistors; tunnel FET; VLS growth;

D O I：

10.1109/TED.2008.2008011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. Analytical as well as simulation results are compared with experimental data to explain the various factors impacting the electronic transport in NW-FETs.

引用

页码：2827 / 2845

页数：19

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