Ge concentration dependence of Sb surface segregation during SiGe MBE

被引：18

作者：

Nakagawa, K ^{[1
]}

Sugii, N ^{[1
]}

Yamaguchi, S ^{[1
]}

Miyao, M ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

surface segregation of Sb; SiGe molecular beam epitaxy;

D O I：

10.1016/S0022-0248(98)01389-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Surface segregation of antimony atoms during Si1-xGex molecular beam epitaxy (MBE) was studied by using the delta-doping technique. The segregation of Sb increases with increasing growth temperature and increasing Ge concentration of Si1-xGex. This result is well explained by a two-state model in which the energy barrier to Sb surface segregation decreases with increasing Ge concentration of Si1-xGex. (C) 1999 Published by Elsevier Science B.V. AU rights reserved.

引用

页码：560 / 563

页数：4

共 3 条

[1]

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Nakagawa, K ;

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JOURNAL OF CRYSTAL GROWTH, 1997, 175 :481-485

[3] Ultrahigh electron mobilities in Si1-xGex/Si/Si1-xGex heterostructures with abrupt interfaces formed by solid-phase epitaxy [J].

Sugii, N ;

Nakagawa, K ;

Kimura, Y ;

Yamaguchi, S ;

Miyao, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1308-1310

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