Structures of germanium clusters: Where the growth patterns of silicon and germanium clusters diverge

被引:128
作者
Shvartsburg, AA
Liu, B
Lu, ZY
Wang, CZ
Jarrold, MF
Ho, KM
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Iowa State Univ, Ames Lab, Ames, IA 50011 USA
[3] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA
关键词
D O I
10.1103/PhysRevLett.83.2167
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have performed a systematic ground state geometry search for Ge, neutrals and cations in the n less than or equal to 16 size range using density functional theory-local density approximation and gradient-corrected methods. Like their silicon analogs, medium-sized Ge clusters are stacks of tricapped trigonal prism subunits. However, the structures of Ge-n and Si-n for n = 13 and n greater than or equal to 15 differ in details. The onset of the structural divergence between the growth patterns of Si and Ge clusters is confirmed by the measurements of gas phase ion mobilities, fragmentation pathways, and dissociation energies.
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页码:2167 / 2170
页数:4
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