Nanoscale modification of optical properties in Ge-doped SiO2 glass by electron-beam irradiation

被引：36

作者：

Jiang, N

Qiu, JR

Gaeta, AL

Silcox, J

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 11期

关键词：

D O I：

10.1063/1.1454211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we demonstrate rapid decomposition in Ge-doped SiO2 glass under high-energy electron irradiation, and comment on possible mechanisms for the interaction of the electron-beam with the glass. Nanometer-scale modifications in Ge-doped SiO2 glasses can be obtained by the redistribution of Ge in the glasses as a result of patterned electron-beam writing. (C) 2002 American Institute of Physics.

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页码：2005 / 2007

页数：3

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