Electronic effects in the activation of supported metal clusters:: Density functional theory study of H2 dissociation on Cu/SiO2
被引:32
作者:
López, N
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机构:Univ Barcelona, Dept Quim Fis, Barcelona 08028, Spain
López, N
Illas, F
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机构:Univ Barcelona, Dept Quim Fis, Barcelona 08028, Spain
Illas, F
Pacchioni, G
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机构:Univ Barcelona, Dept Quim Fis, Barcelona 08028, Spain
Pacchioni, G
机构:
[1] Univ Barcelona, Dept Quim Fis, Barcelona 08028, Spain
[2] Univ Barcelona, Ctr Recerca Quim Teor, Barcelona 08028, Spain
[3] Univ Milan, Dipartimento Sci Mat, Ist Nazl Fis Mat, I-20125 Milan, Italy
来源:
JOURNAL OF PHYSICAL CHEMISTRY B
|
1999年
/
103卷
/
40期
关键词:
D O I:
10.1021/jp991655t
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
We have performed density functional theory calculations on the dissociation of molecular hydrogen on small gas-phase and silica-supported Cu clusters and on the Cu(lll) surface. The Cu surface and the silica support have been represented by cluster models. The supported Cu clusters interact with a nonbridging oxygen, a paramagnetic defect present on the surface of dehydroxylated silica, giving rise to a partial charge transfer to the substrate. While free Cu clusters and the Cu metal are rather unreactive toward H-2 dissociative adsorption, the supported clusters exhibit a much higher reactivity connected with a strong geometrical rearrangement of the metal structure. As a consequence of the interaction with the substrate, the Cu clusters become active catalysts in H-2 dissociation.