Synthesis and electronic properties of B-doped single wall carbon nanotubes

被引：58

作者：

Borowiak-Palen, E

Pichler, T

Graff, A

Kalenezuk, RJ

Knupfer, M

Fink, J

机构：

[1] Leibniz Inst Solid State & Mat Res Dresden, D-01171 Dresden, Germany

[2] Tech Univ Szczecin, Inst Chem Env Engn, PL-70450 Szczecin, Poland

来源：

CARBON | 2004年 / 42卷 / 5-6期

关键词：

single wall carbon nanotubes; Boron doping; substitution process;

D O I：

10.1016/j.carbon.2003.12.004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We analyse the doping dependence of boron substituted single wall carbon nanotubes at high boron content. A specially designed substitution process was used to produce nanotubes with about 15 and 10 at.% of boron. Irrespective of the doping level of boron atoms, the nanotubes still exhibit some unique and common electronic and optical properties. The changes in the electronic properties, of the nanotubes as a function of doping were investigated using bulk sensitive high resolution EELS and optical crystal structure are hardly altered compared to pristine nanotubes. (C) 2003 Elsevier Ltd. All rights reserved.

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页码：1123 / 1126

页数：4

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