Photoelectrochemical study of electrochemically formed semiconducting yttrium hydride (YH3-x)

被引：7

作者：

Di Quarto, F ^{[1
]}

Romano, MC ^{[1
]}

Piazza, S ^{[1
]}

Sunseri, C ^{[1
]}

机构：

[1] Univ Palermo, Dipartimento Ingn Chim Proc & Mat, I-90128 Palermo, Italy

来源：

ELECTROCHIMICA ACTA | 1999年 / 44卷 / 23期

关键词：

D O I：

10.1016/S0013-4686(99)00166-8

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The first photoelectrochemical study of semiconducting YH3 - x films formed by etching bulk Y metal in 0.5 M H2SO4 solution is reported. The formation of semiconducting hydride having an indirect optical band gap, E-g(opt), of about 2.35 eV is confirmed by in situ photocurrent spectroscopy. The photoelectrochemical behaviour of such a phase was investigated both in alkaline and in acidic solutions. The flat band potential was estimated to be U-fb = - 1.25 V/NHE, independent of pH. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：4051 / 4059

页数：9

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