A high-output-impedance current microstimulator for anatomical rewiring of cortical circuitry

被引:15
作者
Azin, Meysam [1 ]
Mohseni, Pedram [1 ]
机构
[1] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
来源
PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10 | 2008年
关键词
D O I
10.1109/ISCAS.2008.4541964
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper reports on the design, implementation, and performance characterization of a high-output-impedance current microstimulator fabricated using the TSMC 0.35 mu m 2P/4M n-well CMOS process as part of a fully integrated neural implant for reshaping long-range intracortical connectivity patterns in an injured brain. It can deliver a maximum current of 94.5 mu A to the target cortical tissue with current efficiency of 86% and voltage compliance of 4.7V with a 5-V power supply. The stimulus current can be programmed via a 6-bit DAC with an accuracy better than 0.47 LSB. Stimulator functionality is also verified with in vitro experiments in saline using a silicon microelectrode with iridium oxide (IrO) stimulation sites.
引用
收藏
页码:2502 / 2505
页数:4
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