Phosphosilicate gels as a solid state proton conductor at medium temperature and low humidity

被引：19

作者：

Matsuda, A ^{[1
]}

Kanzaki, T ^{[1
]}

Tadanaga, K ^{[1
]}

Tatsumisago, M ^{[1
]}

Minami, T ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Appl Mat Sci, Sakai, Osaka 5998531, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2002年 / 110卷 / 02期

关键词：

proton conduction; phosphosilicate gel; phosphoric acid; medium temperature range; low humidity;

D O I：

10.2109/jcersj.110.131

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Phosphosilicate (P2O5-SiO2) gels with a P/Si molar ratio of 1.0 heat-treated at 150degreesC were found to retain a high conductivity of 1.5 x 10(-2) S . cm(-1) even after holding at a temperature of 130degreesC at a relative humidity of 0.7% for about 400 min. On the other hand, the conductivity of the porous silica gels impregnated with 5 M H3PO4 largely decreased from 1 x 10(-2) to 6 x 10(-6) S . cm(-1) during holding under the same conditions for about 400 min. The difference in the changes of conductivities between phosphosilicate gels and H3PO4-impregnated porous silica gels with holding time indicates that the former can retain larger amounts of adsorbed water at MOT than the latter. Condensed structural units with Si-O-P-OH groups in the phosphosilicate gels are expected to enhance the retention of the adsorbed water in the gels and improve the proton conductivity even at relatively high temperatures and low humidity conditions.

引用

页码：131 / 134

页数：4

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