Mechanism of atomic force microscopy anodization lithography on a mixed Langmuir-Blodgette resist of palmitic acid and hexadecylamine on silicon

被引：48

作者：

Ahn, SJ ^{[1
]}

Jang, YK ^{[1
]}

Lee, H ^{[1
]}

机构：

[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 14期

关键词：

D O I：

10.1063/1.1467984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A degradation process of a resist was observed by an atomic force microscope (AFM) during AFM anodization lithography on a mixed Langmuir-Blodgett resist of palmitic acid and hexadecylamine. Based on the observation, we proposed a two-step mechanism as follows: (i) a partial degradation of the resist was first achieved and (ii) silicon oxide started to be grown in the presence of a resist. Lateral force microscopy was accomplished on the patterned area before and after the resist was stripped in order to confirm when the silicon oxide started to be grown in the area. This result provides us with the actual information on the mechanism of the anodization lithography on an organic resist. (C) 2002 American Institute of Physics.

引用

页码：2592 / 2594

页数：3

共 25 条

[1] Atomic force microscope tip-induced local oxidation of silicon: Kinetics, mechanism, and nanofabrication [J].