The effects of In isoelectronic substitution for Ga on the thermoelectric properties of Sr8Ga16-xInxGe30 type-I clathrates

被引：12

作者：

Cao, Wei-Qiang ^{[1
]}

Yan, Yong-Gao ^{[1
]}

Tang, Xin-Feng ^{[1
]}

Deng, Shu-Kang ^{[1
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 21期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0022-3727/41/21/215105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

n-type Sr8Ga16-xInxGe30 ( x = 0, 0.5, 1.0, 1.5) clathrates have been synthesized by combining melting reaction with the spark plasma sintering method. The effects of isoelectronic substitution of In for Ga on thermoelectric properties have been investigated. The results show that the solubility limit of In in the Sr - Ga - Ge system is less than 1.5 when it is expressed by the formula of Sr8Ga16-xInxGe30. With increasing In content x, the cell parameter and the electrical conductivity of the Sr8Ga16-xInxGe30 compound increase, while the Seebeck coefficient decreases. The isoelectronic substitution of In for Ga leads to a small variation of the room- temperature carrier concentration, an increase in the room- temperature carrier mobility as well as a remarkable decrease in lattice thermal conductivity. As a result, the maximum dimensionless figure of merit ZT of 0.72 is obtained at 800K for Sr8Ga15.5In0.5Ge30. Compared with that of ternary alloy Sr8Ga16Ge30, it increases by 38% at the same temperature.

引用

页数：6

共 21 条

[1] Transport properties of lightly doped CoSb3 single crystals [J].

Arushanov, E ;

Fess, K ;

Kaefer, W ;

Kloc, C ;

Bucher, E .

PHYSICAL REVIEW B, 1997, 56 (04) :1911-1917

[2] Crystal structures, atomic vibration, and disorder of the type-I thermoelectric clathrates Ba8Ga16Si30, Ba8Ga16Ge30, Ba8In16Ge30, and Sr8Ga16Ge30 -: art. no. 144107 [J].

Bentien, A ;

Nishibori, E ;

Paschen, S ;

Iversen, BB .

PHYSICAL REVIEW B, 2005, 71 (14)

[3] Band structures and thermoelectric properties of the clathrates Ba8Ga16Ge30, Sr8Ga16Ge30, Ba8Ga16Si30, and Ba8In16Sn30 [J].

Blake, NP ;

Latturner, S ;

Bryan, JD ;

Stucky, GD ;

Metiu, H .

JOURNAL OF CHEMICAL PHYSICS, 2001, 115 (17) :8060-8073

[4] Structural disorder and thermal conductivity of the semiconducting clathrate Sr8Ga16Ge30 [J].

Chakoumakos, BC ;

Sales, BC ;

Mandrus, DG ;

Nolas, GS .

JOURNAL OF ALLOYS AND COMPOUNDS, 2000, 296 (1-2) :80-86

[5] Glasslike heat conduction in high-mobility crystalline semiconductors [J].

Cohn, JL ;

Nolas, GS ;

Fessatidis, V ;

Metcalf, TH ;

Slack, GA .

PHYSICAL REVIEW LETTERS, 1999, 82 (04) :779-782

[6] Thermoelectric properties of sintered clathrate compounds Sr8GaxGe46-x with various carrier concentrations [J].

Fujita, Isao ;

Kishimoto, Kengo ;

Sato, Masaya ;

Anno, Hiroaki ;

Koyanagi, Tsuyoshi .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)

[7] Structure and thermoelectric properties of Ba6Ge25-x, Ba6Ge23Sn2, and Ba6Ge22In3:: Zintl phases with a chiral clathrate structure [J].

Kim, SJ ;

Hu, SQ ;

Uher, C ;

Hogan, T ;

Huang, BQ ;

Corbett, JD ;

Kanatzidis, MG .

JOURNAL OF SOLID STATE CHEMISTRY, 2000, 153 (02) :321-329

[8] Preparation and thermoelectric properties of A8IIB16IIIB30IV clathrate compounds [J].

Kuznetsov, VL ;

Kuznetsova, LA ;

Kaliazin, AE ;

Rowe, DM .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :7871-7875

[9] Thermoelectric property of fine-grained CoSb3 skutterudite compound fabricated by mechanical alloying and spark plasma sintering [J].

Liu, Wei-Shu ;

Zhang, Bo-Ping ;

Li, Jing-Feng ;

Zhao, Li-Dong .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (02) :566-572

[10] Optimization of the thermoelectric properties of Ba8Ga16Ge30 [J].

Martin, J. ;

Wang, H. ;

Nolas, G. S. .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

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