Observation of a gap opening in FeSi with photoelectron spectroscopy

被引：43

作者：

Breuer, K ^{[1
]}

Messerli, S ^{[1
]}

Purdie, D ^{[1
]}

Garnier, M ^{[1
]}

Hengsberger, M ^{[1
]}

Baer, Y ^{[1
]}

Mihalik, M ^{[1
]}

机构：

[1] SLOVAK ACAD SCI, INST EXPT PHYS, KOSICE 04354, SLOVAKIA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.56.R7061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of high-resolution photoemission measurements on the narrow-gap semiconductor FeSi. Contrary to previous photoemission studies performed on polycrystalline samples, we observe an incomplete opening of the energy gap in monocrystalline samples at low temperature. This gap is of similar size to that measured in optical experiments and, in further agreement with optical experiments, is closed at 300 K. A direct comparison of the spectra from single and porycrystalline samples suggests that a well-ordered surface is crucial for the observation of this pseudogap by photoemission.

引用

页码：R7061 / R7064

页数：4

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