Ab initio study of deep defect states in narrow band-gap semiconductors:: Group III impurities in PbTe (vol 96, pg 056403, 2006)

被引:6
作者
Ahmad, S
Hoang, K
Mahanti, SD
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10.1103/PhysRevLett.96.169907
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O4 [物理学];
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0702 ;
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页数:1
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[1]   Ab initio study of deep defect states in narrow band-gap semiconductors:: Group III impurities in PbTe [J].
Ahmad, S ;
Hoang, K ;
Mahanti, SD .
PHYSICAL REVIEW LETTERS, 2006, 96 (05)