High-efficiency cadmium-free Cu(In,Ga)Se2 thin-film solar cells with chemically deposited ZnS buffer layers

被引：78

作者：

Nakada, T ^{[1
]}

Furumi, K ^{[1
]}

Kunioka, A ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Dept Elect & Elect Engn, Setagaya Ku, Tokyo 157, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 10期

关键词：

Cd-free; Cu(In; Ga)Se-2; solar cells; thin-film; ZnS;

D O I：

10.1109/16.792002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cadmium-free Cu(In,Ga)Sea (CIGS) thin-film solar cells with a MgF2/ZnO:Al/CBD-ZnS/CIGS/Mo/SLG structure have been fabricated using chemical hath deposition (CBD)-ZnS buffer layers and high-quality CIGS absorber layers grown using molecular beam epitaxy (MBE) system. The use of CBD-ZnS, which is a wider band gap material than CBD-CdS, improved the quantum efficiency of fabricated cells at short wavelengths, leading to an increase in the short-circuit current. The best cell at present yielded an active area efficiency of 16.9% which is the highest value reported previously for Cd-free CIGS thin-film solar cells. The as-fabricated solar cells exhibited a reversible light-soaking effect under AM 1.5, 100 mW/cm(2) illumination. This paper also presents a discussion of the issues relating to the use of the CBD-ZnS buffer material for improving device performance.

引用

页码：2093 / 2097

页数：5

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