Current transport mechanisms in n-InSe/p-CdTe heterojunctions

被引：16

作者：

Gorley, P. M. ^{[1
]}

Grushka, Z. M. ^{[1
]}

Makhniy, V. P. ^{[1
]}

Grushka, O. G. ^{[1
]}

Chervinsky, O. A. ^{[1
]}

Horley, P. P. ^{[1
]}

Vorobiev, Yu. V. ^{[2
]}

Gonzalez-Hernandez, J. ^{[3
]}

机构：

[1] Yuri Fedkovych Chernivtsi Natl Univ, 2 Kotsyubynsky Str, UA-58012 Chernovtsy, Ukraine

[2] CINVESTAV Oueretaro, Oueretaro 76230, Mexico

[3] CIMAV, Chihuahua 31109, Mexico

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 12 2008 | 2008年 / 5卷 / 12期

关键词：

D O I：

10.1002/pssc.200780149

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Anisotype heterojunctions a-InSe/p-CdTe were created by deposition over optical contact. The main electrical properties of the devices obtained were investigated. It was found that the current under the forward bias is determined by tunneling-recombination processes under the low voltage and over-barrier transport for the high voltage. The reverse current features a tunneling character for the small bias, and becomes significantly amplified for the large applied voltages due to the avalanche multiplication of the carriers caused by impact ionization. Our research has shown that the experimental results can be adequately described in the framework of the known models of current transport for the abrupt anisotype heterojunctions. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：3622 / +

页数：2

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