Electron tunneling rates between atoms and surfaces covered by dielectric films

被引：6

作者：

Nordlander, P ^{[1
]}

Modisette, JP ^{[1
]}

机构：

[1] RICE UNIV,RICE QUANTUM INST,HOUSTON,TX 77251

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 125卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0168-583X(96)00919-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Using the complex scaling method, we have investigated how the energy shift and broadening of atomic levels near metal surfaces is modified when thin dielectric films are adsorbed on the surface. The calculation shows that dielectric films can introduce a significant tunneling barrier which can drastically reduce the widths of the atomic levels. Also, the atomic level shift can be strongly modified. Near the metal/film and film/vacuum interface non-image-like shifts occur which can be sufficiently strong to alter the charge transfer.

引用

收藏

页码：305 / 309

页数：5

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