Optimization of sublimation growth of SiC bulk crystals using modeling

被引：36

作者：

Ramm, MS

Mokhov, EN

Demina, SE

Ramm, MG

Roenkov, AD

Vodakov, YA

Segal, AS

Vorob'ev, AN

Karpov, SY

Kulik, AV

Makarov, YN

机构：

[1] Univ Erlangen Nurnberg, Fluid Mech Dept, D-91058 Erlangen, Germany

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Inst Fine Mech & Opt, Comp Technol Dept, St Petersburg 197101, Russia

[4] Soft Impact Ltd, St Petersburg 194156, Russia

[5] Univ Erlangen Nurnberg, Fluid Mech Dept, D-91058 Erlangen, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

bulk crystals; etching of graphite; SiC; sublimation growth; tantalum container;

D O I：

10.1016/S0921-5107(98)00456-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this purpose, mass transport of species in the graphite crucible coupled with global heat transfer in a sublimation growth system is studied. Specific features of the growth process in a tantalum container are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：107 / 112

页数：6