Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP

被引:150
作者
Painter, OJ [1 ]
Husain, A
Scherer, A
O'Brien, JD
Kim, I
Dapkus, PD
机构
[1] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA
[2] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA
基金
美国国家科学基金会;
关键词
InGaAsP; microcavities; photonic crystals; quantum-well laser; semiconductor device fabrication; spontaneous emission control;
D O I
10.1109/50.802998
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Room temperature lasing from optically pumped single defects in a two-dimensional (2-D) photonic bandgap (PBG) crystal is demonstrated. The high-Q optical microcavities are formed by etching a triangular array of air holes into a half-wavelength thick multiquantum-well waveguide. Defects in the 2-D photonic crystal are used to support highly localized optical modes with volumes ranging from 2 to 3 (lambda/2n)(3). Lithographic tuning of the air hole radius and the lattice spacing are used to match the cavity wavelength to the quantum-well gain peak, as well as to increase the cavity Q, The defect lasers were pumped with 10-30 ns pulses of 0.4-1% duty cycle, The threshold pump power was 1.5 mW (approximate to 500 mu W absorbed).
引用
收藏
页码:2082 / 2088
页数:7
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