On the determination of internal optical mode loss of semiconductor lasers

被引:22
作者
Smowton, PM
Blood, P
机构
[1] Department of Physics and Astronomy, University of Wales Cardiff
关键词
D O I
10.1063/1.118875
中图分类号
O59 [应用物理学];
学科分类号
摘要
Use is made of a numerical simulation of the light-current characteristic to examine the errors which may arise in the determination of the optical mode loss (alpha(i)) from the cavity length dependence of the external differential efficiency (eta(ext)(d)). In particular, we focus on the effects of incomplete Fermi level pinning and carrier leakage, and show that cui can only be determined correctly if eta(ext)(d) is determined under conditions where it is invariant both with current level and temperature. (C) 1997 American Institute of Physics.
引用
收藏
页码:2365 / 2367
页数:3
相关论文
共 5 条
  • [1] AGRAWAL GP, 1993, SEMICONDUCTOR LASERS
  • [2] NOVEL TECHNIQUE FOR DETERMINING INTERNAL LOSS OF INDIVIDUAL SEMICONDUCTOR-LASERS
    ANDREKSON, PA
    OLSSON, NA
    TANBUNEK, T
    LOGAN, RA
    COBLENTZ, D
    TEMKIN, H
    [J]. ELECTRONICS LETTERS, 1992, 28 (02) : 171 - 172
  • [3] BIARD JR, 1964, T METALL SOC AIME, V230, P286
  • [4] Fermi level pinning and differential efficiency in GaInP quantum well laser diodes
    Smowton, PM
    Blood, P
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (09) : 1073 - 1075
  • [5] SMOWTON PM, IEE P OPTOELECTRONIC