Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation

被引：3

作者：

Kucherenko, IV ^{[1
]}

Vodopyanov, LK ^{[1
]}

Kadushkin, VI ^{[1
]}

机构：

[1] SCI RES TECHNOL INST,RYAZAN 390011,RUSSIA

来源：

SEMICONDUCTORS | 1997年 / 31卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1187082

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photocurrent has been observed in a GaAs/GaAlAs structure with three asymmetric quantum wells in a magnetic field H parallel to the surface of sample irradiated with a quasicontinuous-wave laser with lambda = 1.065 mu m. The current flows in the plane of the layers in a direction perpendicular to the magnetic field. The magnitude of the current increases with H, and when the magnetic field is switched, the sign of the photocurrent changes. The effect is explained on the basis of a model with asymmetric electronic wave functions in a magnetic field. (C) 1997 American Institute of Physics.

引用

页码：740 / 742

页数：3