New III-V compound semiconductors TlInGaP for 0.9 mu m to over 10 mu m wavelength range laser diodes and their first successful growth

New III-V compound semiconductors TlInGaP (thallium indium gallium phosphide) lattice-matched to InP are proposed for 0.9 mu m to over 10 mu m wavelength range laser diodes and their first successful growth is reported by gas-source molecular beam epitaxy. A type-I band lineup and a larger band discontinuity in the conduction band than in the valence band are expected for their heterostructures. They also have the potential to exhibit a temperature-independent band-gap energy (wavelength); which is promising for the fabrication of lasers that can be used in wavelength division multiplexing (WDM) optical fiber communication. Grown layers exhibit (2 x 4) surface reconstruction and have mirror-like surfaces. Phase separation is not observed in this material system by X-ray diffraction measurement.