Effect of growth rate on the nucleation of α-Fe2O3 on α-Al2O3(0001) by oxygen-plasma-assisted molecular beam epitaxy

被引:9
作者
Yi, SI [1 ]
Liang, Y [1 ]
Chambers, SA [1 ]
机构
[1] Pacific NW Natl Lab, Environm Mol Sci Lab, Richland, WA 99325 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 04期
关键词
D O I
10.1116/1.581883
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have investigated the role of growth rate on the nucleation of epitaxial alpha-Fe2O3 on alpha-Al2O3(0001). We show that a slow growth rate (similar to 1-2 Angstrom/min) must be employed during growth of the first 30 Angstrom in order to form relaxed, three-dimensional islands. A higher growth rate (similar to 0.1-0.3 Angstrom/s) can then be used. Island coalescence occurs, resulting in a laminar surface for film thicknesses as low as a few hundred Angstrom. If a higher initial growth rate is used, three-dimensional island growth is kinetically impeded, and film relaxation occurs by misfit dislocation generation. The film surface then roughens on a more macroscopic length scale, giving rise to a poor quality surface; (C) 1999 American Vacuum Society. [S0734-2101(99)20604-5].
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页码:1737 / 1742
页数:6
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