Carrier-density dependence of optical phonons in carbon nanotubes

被引：1

作者：

Ando, Tsuneya ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

INTERNATIONAL SYMPOSIUM ON ADVANCED NANODEVICES AND NANOTECHNOLOGY | 2008年 / 109卷

关键词：

D O I：

10.1088/1742-6596/109/1/012006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dependence of the frequency and broadening of optical phonons on the Fermi level is theoretically studied in carbon nanotubes. In metallic nanotubes, the frequency shift exhibits a logarithmic divergence and the broadening vanishes discontinuously when the Fermi level reaches the half of the optical-phonon frequency for the longitudinal mode, while the transverse mode is not affected. In semiconducting nanotubes, the frequency is raised for both transverse and longitudinal modes.

引用

页数：4

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