Optical investigation of carrier tunneling in semiconductor nanostructures

被引：19

作者：

Emiliani, V

Ceccherini, S

Bogani, F

Colocci, M

Frova, A

Shi, SS

机构：

[1] IST NAZL FIS MAT,I-50125 FLORENCE,ITALY

[2] EUROPEAN LAB NONLINEAR SPECT,DIPARTIMENTO FIS,I-50125 FLORENCE,ITALY

[3] UNIV ROMA LA SAPIENZA,DIPARTIMENTO FIS,IST NAZL FIS MAT,I-00198 ROME,ITALY

[4] UNIV CALIF SANTA BARBARA,QUEST CTR,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.56.4807

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The tunneling dynamics of excitons and free carriers in AlxGa1-xAs/GaAs asymmetric double quantum well and near-surface quantum well structures has been investigated by means of time-resolved optical techniques. The competing processes of carrier tunneling out of the quantum well and exciton formation and recombination inside the quantum well have been thoroughly studied in the range of the excitation densities relevant to device applications. A consistent picture capable of fully describing the carrier and excition-tunneling mechanisms in both types of structures has been obtained and apparently contrasting results in the recent literature are clarified.

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页码：4807 / 4817

页数：11

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