Gallium K-edge EXAFS measurements on cubic and hexagonal GaN

被引：14

作者：

Katsikini, M ^{[1
]}

Rossner, H

Fieber-Erdmann, M

Holub-Krappe, E

Moustakas, TD

Paloura, EC

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54006 Thessaloniki, Greece

[2] Hahm Meitner Inst AS, D-14109 Berlin, Germany

[3] Boston Univ, Photon Ctr, Boston, MA 02215 USA

[4] Boston Univ, Dept ECE, Boston, MA 02215 USA

来源：

JOURNAL OF SYNCHROTRON RADIATION | 1999年 / 6卷

关键词：

GaN; EXAFS; Einstein temperature; binary semiconductors;

D O I：

10.1107/S090904959900151X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The microstructure of undoped cubic and hexagonal GaN films is studied using temperature dependent Ga K-edge EXAFS measurements (10K-290K). The microstructure around the Ga atom is distorted due to a splitting of the second nearest neighbor shell, which consists of Ga atoms. This splitting results in an additional Ga path at a distance longer than expected by 0.8+/-0.05 A and is attributed to local lattice relaxation around nitrogen vacancies. From the temperature dependence of the DW factors for the 2(nd) nearest neighbor shell of Ga, the Einstein temperature is equal to 318+/-25K.

引用

页码：561 / 563

页数：3

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