Directionally dependent ferroelectric phase transition order of anisotropic epitaxial BaxSr1-xTiO3 thin films -: art. no. 012902

被引：22

作者：

Bellotti, JA ^{[1
]}

Chang, WT ^{[1
]}

Qadri, SB ^{[1
]}

Kirchoefer, SW ^{[1
]}

Pond, JM ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期

关键词：

D O I：

10.1063/1.2161937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Ba0.5Sr0.5TiO3 thin films were grown by pulsed-laser deposition on (100) LaAlO3 substrates in two distinct strain states, c/a > 1 and c/a < 1. X-ray diffraction measurements over the temperature range of 20 degrees C to -120 degrees C showed that the change in the c/a ratio with decreasing temperature was discontinuous and positive for the film with c/a > 1, and continuous and negative for the film with c/a < 1. These symmetry changes in the c/a ratio with temperature were correlated with measurements of the in-plane dielectric properties, and showed that the polarization in these two types of structures has characteristically different behavior that is highly directionally-dependent.

引用

页数：3

共 18 条

[1] Structural characteristics of ferroelectric phase transformations in single-domain epitaxial films [J].