Influence of non-perovskite phases on ferroelectric and dielectric behavior of electron-beam deposited PZT thin films

被引：8

作者：

Darvish, SR

Rastogi, AC

Bhatnagar, PK

机构：

[1] Natl Phys Lab, Div Mat, New Delhi 110012, India

[2] Univ Delhi, Dept Elect Sci, New Delhi 110021, India

来源：

THIN SOLID FILMS | 1999年 / 346卷 / 1-2期

关键词：

perovskite phase; PZT thin film; crystalline structure; ferroelectrics;

D O I：

10.1016/S0040-6090(98)01471-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystalline structure-induced effects on the ferroelectric and dielectric properties in electron-beam deposited PZT thin films are described, TiO2 dispersion in PZT reduces dielectric constant and charge storage density to 400 and 5.4 mu C/cm(2) and increases dissipation factor. Pyrochlore PZT inclusions cause further reduction to 60 and 77 nC/cm(2) but have no effect on microscopic polarization, Wide variation in relaxation times below 220 degrees C and Debye-like relaxation process above 220 degrees C is the characteristics behavior of TiO2 mixed PZT films. A relaxation time constant of approximate to 10(-11) s with activation energy of 0.38 eV is observed in TiO2 mixed PZT. Inclusion of pyrochlore phase causes high time constant of relaxation process approximate to 4.2 mu s and large dissipation factor. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：108 / 115

页数：8

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